1/4 2011.11 - rev.a schottky barrier diode rsx201va-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)small mold type (tumd2) 2)low v f & low i r 3)high reliability ? construction ? structure silicon epitaxial planer ? absolute maximum ratings (ta=25 c) symbol unit v rm v v r v io a io a i fsm a tj c tstg c ? electrical characteristics (ta=25 c) symbol min. typ. max. unit conditions v f1 - 0.36 0.42 v i f =1a v f2 - 0.40 0.46 v i f =1.5a i r1 - 15 60 a v r =5v i r 2 - 70 300 a v r =30v parameter forward voltage reverse current junction temperature 125 storage temperature - 40 to + 125 average rectified forward current (on the almina substrate) 1.5 average rectified forward current (on the glass epoxy substrate) 1.0 forward current surge peak 60hz ? 1cyc 8 reverse voltage (dc) 30 ? taping dimensions (unit : mm) parameter limits reverse voltage (repetitive) 30 1.1 2.0 0.8 0. tumd2 rohm : tumd2 1.30.05 0.80.05 2.50.2 1.90.1 0.60.2 0.1 0.170.1 0.05 dot (year week factory) 4.0 0.1 2.0 0.05 1.5 0.1 0 1.43 0.05 4.0 0.1 1.0 0.2 0 2.75 3.5 0.05 1.75 0.1 8.0 0.2 0.25 0.05 0.9 0.08 2.8 0.05 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rsx201va-30 2/4 2011.11 - rev.a 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 tj=125 c tj=150 c tj=25 c tj=75 c tj= ? 25 c forward voltage v f (v) v f -i f characteristics forward current:i f (a) 0.001 0.01 0.1 1 10 100 1000 0 10 20 30 tj=125 c tj=25 c tj=75 c reverse current:i r (ma) reverse voltage v r (v) v r -i r characteristics 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 v f dispersion map forward voltage:v f (v) ave:0.367v i f =1.0a tj=25 c 10 100 1000 v r =30v tj=25 c ave:76.2 a reverse current:i r ( a) i r dispersion map 230 240 250 260 270 280 f=1mhz v r =0v ave:255.1pf capacitance between terminals:ct(pf) ct dispersion map www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsx201va-30 3/4 2011.11 - rev.a 0 10 20 30 40 50 ave:28.1a i fsm dispersion map peak surge forward current:i fsm (a) 8.3ms i fsm 1cyc 0 5 10 15 20 25 30 i f =0.5a i r =1a irr=0.25 i r tj=25 c ave:7.8ns trr dispersion map reverse recovery time:trr(ns) 1 10 100 1000 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1 10 100 peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics t i fsm 0 0.0005 0.001 0.0015 0.002 0 10 20 30 sin( 180) d.c. d=1/2 reverse power dissipation:p r (w) reverse voltage:v r (v) v r -p r characteristics 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) on glass - epoxy substrate time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsx201va-30 4/4 2011.11 - rev.a 0 1 2 3 0 25 50 75 100 125 sin( 180) d.c. d=1/2 ambient temperature:ta( c) derating curve(io - ta) average rectified forward current:io(a) t tj=125 c d=t/t t v r io v r =15v 0a 0v 0 1 2 3 0 25 50 75 100 125 sin( 180) d.c. d=1/2 average rectified forward current:io(a) case temperature:tc( c) derating curve(io -tc) t tj=125 c d=t/t t v r io v r =15v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 no break at 30kv c=100pf r=1.5k ave 11.4kv electrostatic discharge test esd(kv) esd dispersion map www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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